2SB1185 Ver la hoja de datos (PDF) - Unspecified

Número de pieza

componentes Descripción

Lista de partido

2SB1185

Silicon PNP transistor in a TO-220F Plastic Package.

Unspecified 

2SB1185

Rev.F Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Peak Collector Current

Collector Power Dissipation

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC

PC(TC=25℃ )

Tj

Tstg

DATA SHEET

数值

Rating

-60

-50

-5.0

-3.0

-4.5

2.0

25

150

-55～150

单位

Unit

V

V

V

A

A

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=-50μA IE=0

VCEO IC=-1.0mA IB=0

Emitter to Base Breakdown Voltage VEBO IE=-50μA IC=0

Collector Cut-Off Current

ICBO VCB=-40V IE=0

Emitter Cut-Off Current

IEBO VEB=-4.0V IC=0

DC Current Gain

Collector to Emitter Saturation

Voltage

hFE VCE=-3.0V

VCE(sat) IC=-2.0A

IC=-0.5A

IB=-0.2A

Base to Emitter Saturation Voltage

Transition Frequency

Collector output capacitance

VBE(sat)

fT

Cob

IC=-2.0A

IC=-0.5A

f=30MHz

VCB=-10V

f=1.0MHz

IC=-0.2A

VCE=-5.0V

IE=0

最小值 典型值 最大值 单位

Min Typ Max Unit

-60

V

-50

V

-5.0

V

-1.0 μA

-1.0 μA

60

320

-1.0 V

-1.5 V

70

MHz

50

pF

http://www.fsbrec.com

2/6

Share Link: