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110RKI Ver la hoja de datos (PDF) - International Rectifier

Número de pieza
componentes Descripción
Lista de partido
110RKI
IR
International Rectifier IR
110RKI Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
110/111RKI Series
Bulletin I25152 rev. E 09/03
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Type number Code
40
VDRM/VRRM, max. repetitive
peak and off-state voltage
V
400
110/111RKI
80
800
120
1200
VRSM , maximum non-
repetitive peak voltage
V
500
900
1300
IDRM/IRRM max.
@ TJ =mTAJ max.
20
On-state Conduction
Parameter
IT(AV) Max. average on-state current
@ Case temperature
IT(RMS) Max. RMS on-state current
ITSM Max. peak, one-cycle
non-repetitive surge current
I2t
Maximum I2t for fusing
I2t Maximum I2t for fusing
VT(TO)1 Low level value of threshold
voltage
VT(TO)2 High level value of threshold
voltage
rt1
Low level value of on-state
slope resistance
rt2
High level value of on-state
slope resistance
VTM Max. on-state voltage
IH
Maximum holding current
IL
Typical latching current
110/111RKI
110
90
172
2080
2180
1750
1830
21.7
19.8
15.3
14.0
217
Units Conditions
A 180° conduction, half sine wave
°C
DC @ 83°C case temperature
t = 10ms No voltage
A t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
KA2s
KA2s
t = 10ms No voltage
t = 8.3ms reapplied
Initial TJ = TJ max.
t = 10ms 100% VRRM
t = 8.3ms reapplied
t = 0.1 to 10ms, no voltage reapplied
0.82
1.02
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
V
(I > π x IT(AV)),TJ = TJ max.
2.16
1.70
1.57
200
400
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
m
(I > π x IT(AV)),TJ = TJ max.
V
Ipk= 350A, TJ = TJ max., tp = 10ms sine pulse
mA TJ = 25°C, anode supply 6V resistive load
Switching
Parameter
di/dt Max. non-repetitive rate of rise
of turned-on current
td
Typical delay time
tq
Typical turn-off time
110/111RKI
300
1
110
Units Conditions
A/µs
µs
Gate drive 20V, 20, tr 1µs
TJ = TJ max, anode voltage 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 50A, TJ = TJ max., di/dt = -5A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 25
2
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