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JANTX2N6800U

REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS SURFACE MOUNT (LCC-18) 400V, N-CHANNEL

International Rectifier 

IRFE330

1500

1200

VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

900

600

300

0

1

Ciss

Coss

Crss

10

100

VDS , Drain-to-Source Voltage (V)

20 ID = 3.0 A

16

VDS = 320V

VDS = 200V

VDS = 80V

12

8

4

FOR TEST CIRCUIT

0

SEE FIGURE 13

0

10

20

30

40

QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

100

OPERATION IN THIS AREA LIMITED

BY RDS(on)

10 TJ = 150° C

1

TJ = 25°C

0.1

0.0

VGS = 0 V

0.2

0.4

0.6

0.8

1.0

1.2

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

10

10us

100us

1

1ms

TC

TJ

=

=

25 °C

150 °C

Single Pulse

0.1

1

10

10ms

100

1000

VDS, Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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