2N3906 Ver la hoja de datos (PDF) - Daya Electric Group Co., Ltd.

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2N3906

TO-92 Plastic-Encapsulate Transistors

Daya Electric Group Co., Ltd. 

TO-92 Plastic-Encapsulate Transistors

2N3906 TRANSISTOR (PNP)

TO-92

FEATURE

z PNP silicon epitaxial planar transistor for switching and

Amplifier applications

z As complementary type, the NPN transistor 2N3904 is

Recommended

z This transistor is also available in the SOT-23 case with

the type designation MMBT3906

1.EMITTER

2.BASE

3. COLLECTOR

MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

TJ

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

-40

-40

-5

-0.2

0.625

150

-55-150

Units

V

V

V

A

W

℃

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Delay Time

Rise Time

Storage Time

Fall Time

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

ICEX

IEBO

hFE1

hFE2

hFE3

VCE(sat)

VBE(sat)

fT

td

tr

ts

tf

Test conditions

IC = -10μA, IE=0

IC =-1mA , IB=0

IE= -10μA, IC=0

VCB= -40 V,IE=0

VCE= -30 V,VBE(off)=-3V

VEB= -5 V , IC=0

VCE=-1 V, IC= -10mA

VCE=-1 V, IC= -50mA

VCE=-1 V, IC= -100mA

IC= -50mA, IB= -5mA

IC= -50mA, IB= -5mA

VCE=-20V, IC= -10mA

f = 100MHz

VCC=-3V,VBE=-0.5V,

IC=-10mA,IB1=-1mA

VCC=-3V,Ic=-10mA

IB1=IB2=-1mA

MIN TYP

-40

-40

-5

100

60

30

250

123

MAX

-0.1

-50

-0.1

400

-0.4

-0.95

35

35

225

75

UNIT

V

V

V

μA

nA

μA

V

V

MHz

ns

ns

ns

ns

CLASSIFICATION OF hFE1

Rank

Range

O

100-200

Y

200-300

G

300-400

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