STP80NE03L-06_98 Ver la hoja de datos (PDF) - STMicroelectronics
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STP80NE03L-06_98 Datasheet PDF : 8 Pages
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STP80NE03L-06
THERMAL DATA
Rthj-case
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
1
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol
IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 15 V)
Max Value
80
600
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS
IDSS
IGSS
Parameter
Test Conditions
Drain-source
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating
Tc =125 oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 15 V
Min.
30
Typ. Max.
1
10
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbol
VGS(th)
RDS(on)
ID(on)
Parameter
Test Conditions
Gate Threshold
Voltage
VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10V ID = 40 A
Resistance
VGS = 5V ID = 40 A
On State Drain Current VDS > ID(on) x RDS(on)max
VGS = 10 V
Min.
1
Typ.
1.7
Max.
2.5
Unit
V
0.005 0.006 Ω
0.008 Ω
80
A
DYNAMIC
Symbol
gfs (∗)
Ciss
C oss
Crss
Parameter
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(on) x RDS(on)max ID =40 A
VDS = 25 V f = 1 MHz VGS = 0
Min.
30
Typ.
50
Max.
Unit
S
6500 8700 pF
1500 2000 pF
500 700 pF
2/8
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