BC846 Ver la hoja de datos (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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BC846

NPN Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Transistors

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter

Symbol

Test conditions

Collector-base breakdown voltage

BC846

BC847

VCBO IC= 10µA, IE=0

BC848

Collector-emitter breakdown voltage

BC846

BC847

BC848

IC= 10mA, IB=0

VCEO

Emitter-base breakdown voltage

VEBO IE= 10µA, IC=0

Collector cut-off current

BC846

VCB=70 V , IE=0

BC847

BC848

ICBO

VCB=50 V ,

VCB=30 V ,

IE=0

IE=0

Collector cut-off current

BC846

VCE=60 V , IB=0

BC847

BC848

ICEO

VCE=45 V ,

VCE=30 V ,

IB=0

IB=0

Emitter cut-off current

IEBO VEB=5 V , IC=0

DC current gain

BC846A,847A,848A

BC846B,847B,848B

BC847C,BC848C

VCE= 5V, IC= 2mA

hFE

Collector-emitter saturation voltage

VCE(sat) IC=100mA, IB= 5mA

Base-emitter saturation voltage

VBE(sat) IC=100mA, IB= 5mA

Transition frequency

VCE= 5 V, IC= 10mA

fT

f=100MHz

Collector output capacitance

Cob VCB=10V,f=1MHz

Min

80

50

30

65

45

30

6

110

200

420

100

Typ Max Unit

V

V

V

0.1 μA

0.1 μA

0.1 μA

220

450

800

0.5 V

1.1 V

MHz

4.5 pF

BC846A/B

BC847A/B/C Typical Characteristics

BC848A/B/C

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

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