STW13N80K5 Ver la hoja de datos (PDF) - STMicroelectronics

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STW13N80K5

N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247

STMicroelectronics 

STB13N80K5, STF13N80K5, STP13N80K5,

STW13N80K5

Electrical ratings

1

Electrical ratings

Symbol

Table 2: Absolute maximum ratings

Value

Parameter

D²PAK, TO-220,

TO-247

TO-220FP

Unit

VGS

ID

ID

IDM(2)

PTOT

VISO

dv/dt (3)

dv/dt (4)

Tj

Tstg

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Insulation withstand voltage (RMS) from all

three leads to external heat-sink

(t = 1 s, TC = 25 °C)

Peak diode recovery voltage slope

MOSFET dv/dt ruggedness

Operating junction temperature range

Storage temperature range

±30

V

12

12 (1)

A

7.6

7.6 (1)

A

48

48 (1)

A

190

35

W

2500

V

4.5

50

-55 to 150

V/ns

°C

Notes:

(1)Limited by package.

(2)Pulse width limited by safe operating area.

(3)ISD ≤ 12 A, di/dt =100 A/μs; VDS peak < V(BR)DSS.

(4)VDS ≤ 640 V.

Symbol

Rthj-case

Rthj-amb

Rthj-pcb(1)

Table 3: Thermal data

Parameter

Value

D²PAK TO-220 TO-220FP

Thermal resistance junction-case

0.66

3.57

Thermal resistance junction-ambient

62.5

Thermal resistance junction-pcb

30

TO-247

0.66

50

Unit

°C/W

°C/W

°C/W

Notes:

(1)When mounted on FR-4 board of 1 inch², 2 oz Cu.

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive

(pulse width limited by Tjmax)

4

A

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

148

mJ

DocID024348 Rev 4

3/23

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