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IRFL4310PBF

HEXFET® Power MOSFET

International Rectifier 

IRFL4310PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

V(BR)DSS Drain-to-Source Breakdown Voltage

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient

RDS(on)

Static Drain-to-Source On-Resistance

Min.

100

–––

–––

Typ.

–––

0.12

–––

Max.

–––

–––

0.20

Units

V

V/°C

Ω

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 1.6A „

VGS(th)

gfs

IDSS

IGSS

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

Ciss

Coss

Crss

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

2.0

1.5

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

–––

––– 4.0

––– –––

––– 25

––– 250

––– 100

––– -100

17 25

2.1 3.1

7.8 12

7.8 –––

18 –––

34 –––

20 –––

330 –––

92 –––

54 –––

V VDS = VGS, ID = 250µA

S VDS = 50V, ID = 0.80 A

µA VDS = 100V, VGS = 0V

VDS = 80V, VGS = 0V, TJ = 125°C

nA VGS = 20V

VGS = -20V

ID = 1.6A

nC VDS = 80V

VGS = 10V, See Fig. 6 and 13 „

VDD = 50V

ns ID = 1.6A

RG = 6.2 Ω

RD = 31 Ω, See Fig. 10 „

VGS = 0V

pF VDS = 25V

ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter

IS

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode) 

VSD

Diode Forward Voltage

trr

Reverse Recovery Time

Qrr

Reverse RecoveryCharge

Min. Typ. Max. Units

Conditions

MOSFET symbol

––– ––– 0.91

showing the

A integral reverse

––– ––– 13

p-n junction diode.

––– ––– 1.3 V TJ = 25°C, IS = 1.6A, VGS = 0V „

––– 72 110 ns TJ = 25°C, IF = 1.6A

––– 210 320 nC di/dt = 100A/µs „

Notes:

 Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

‚VDD = 25V, starting TJ = 25°C, L = 9.2 mH

RG = 25Ω, IAS = 3.2A. (See Figure 12)

2

ƒ ISD ≤ 1.6A, di/dt ≤ 340A/µs, VDD ≤ V(BR)DSS,

TJ ≤ 150°C

„ Pulse width ≤ 300µs; duty cycle ≤ 2%.

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