2SD2318 Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Lista de partido
2SD2318 Datasheet PDF : 3 Pages
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Transistors
zElectrical characteristics curves
3.0
50mA
45mA
2.5 40mA
15mA 10mA
2.0
IB=5mA
20mA
1.5
25mA
30mA
1.0
35mA
0.5
0
Ta=25°C
0
1
2
3
4
5
6
COLLECTOR TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter output
characteristics
2SD2318
10
VCE=4V
5
2
0
0.5
0.2
0.1
0.05
0.02
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Grounded emitter propagation
characteristics
10000
5000
Ta=25°C
2000
1000
500
200
100
50
VCE=5V
4V
20
10
0.010.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector current
10000
5000
10
VCE=4V
5
10
Ta=25°C
5
IC/IB=40
2000
Ta=100°C
2
1000
0
2 Ta=-25°C
1
25°C
VBE(sat)
500
25°C −25°C
200
100
50
20
10
0.010.02 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT : IC (A)
0.5
0.2
0.1
0.05
IC/IB=50
40
0.02
0.01
0.010.02 0.05 0.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
0.5
0.2
0.1
100°C
0.05
0.02
25°C
-25°C
VCE(sat)
0.01
0.010.02 0.05 0.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage
vs. collector current
Base-emitter saturation voltage -Collector current
1000
500
200
100
50
Ta=25°C
VCE=5V
1000
500
200
100
50
Ta=25°C
f=1MHz
IE=0A
20
20
10
10
5
5
2
1
−0.001
−0.01
−0.1
−1
ENITTER CURRENT : IE (A)
Fig.7 Resistance ratio vs. collector current
2
1
0.1 0.2 0.5 1 2
5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs. collector-base voltage
5 IC Max (Pulse∗)
2
1
0.5
0.2
0.1
0.05
Ta=25°C
∗ Single
0.02 nonrepetitive
pulse
0.01
0.1 0.2 0.5 1 2
5 10 20 50 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area
Rev.A 2/2
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