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2SD2318_10

High-current gain Power Transistor (60V, 3A)

ROHM Semiconductor 

High-current gain Power Transistor (60V, 3A)

2SD2318

Features

1) High DC current gain.

2) Low saturation voltage.

(Typ. VCE(sat) =0.5V at IC / IB=2A / 0.5A)

Absolute maximum ratings (Ta=25C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

∗ Single pulse PW=100ms

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

Limits

80

60

6

3

4.5

1

15

150

−55 to +150

Unit

V

V

V

A

A(Pulse) ∗

W

W(TC=25°C)

°C

°C

Packaging specifications and hFE

Type

Package

hFE

Code

Basic ordering unit (pieces)

2SD2318

CPT3

UV

TL

2500

Dimensions (Unit : mm)

5.5 1.5

0.9

C0.5

0.8Min.

1.5

2.5

9.5

ROHM : CPT3

EIAJ : SC-63

Electrical characteristics (Ta=25C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Collector-base breakdown voltage

BVCBO

80

−

−

V IC=50μA

Collector-emitter breakdown voltage BVCEO

60

−

−

V IC=1mA

Emitter-base breakdown voltage

BVEBO

6

−

−

V IE=50μA

Collector cutoff current

ICBO

−

−

100

μA VCB=80V

Emitter cutoff current

IEBO

−

−

100

μA VEB=6V

Collector-emitter saturation voltage

VCE(sat)

−

−

1.0

V IC/IB=2A/0.05A

∗

Base-emitter saturation voltage

VBE(sat)

−

−

1.5

V IC/IB=2A/0.05A

∗

DC current transfer ratio

hFE

560

−

1800

− VCE/IC=4V/0.5A

Transition frequency

fT

−

50

−

MHz VCE=5V, IE=−0.2A, f=10MHz

Output capacitance

Cob

−

60

−

pF VCB=10V, IE=0A, f=1MHz

∗

∗Measured using pulse current.

(1) Base

(2) Collector

(3) Emitter

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○c 2010 ROHM Co., Ltd. All rights reserved.

2010.01 - Rev.B

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