STW13N60M2 Ver la hoja de datos (PDF) - STMicroelectronics

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Lista de partido

STW13N60M2

N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages

STMicroelectronics 

Electrical characteristics

STP13N60M2, STU13N60M2, STW13N60M2

Figure 14. Source-drain diode forward

characteristics

VSD (V)

1

TJ=-50°C

AM15720v1

0.9

TJ=25°C

0.8

0.7

TJ=150°C

0.6

Figure 15. Output capacitance stored energy

Eoss(µJ)

AM15721v1

4

3

2

1

0.5

0

2

4

6

8

10 ISD(A)

0

0 100 200 300 400 500 VDS(V)

8/18

DocID023937 Rev 5

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