IRFZ44V Ver la hoja de datos (PDF) - Suntac Electronic
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IRFZ44V Datasheet PDF : 5 Pages
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10000
1000
100
IRFZ44V
N-CHANNEL Power MOSFET
Figure 6. Maximum Peak Current Capability
TRANSCONDUCTANCE
MAY LIMIT CURRENT IN
THIS REGION
FOR TEMPERATURES
ABOVE 25 oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
1---5----0----–----T----C---
125
10
VGS = 10V
1
1E-6
10E-6
100E-6
1E-3
10E-3
tp, Pulse Width (s)
100E-3
1E+0
10E+0
Figure 7. Typical Transfer Characteristics
40 PULSE DURATION = 250 µs
35 DUTY CYCLE = 0.5% MAX
VDS = 10 V
30
25
20
15
+175 oC
10
+25oC
-55oC
5
0
1.5
2.0
2.5
3.0
3.5
4.0
VGS, Gate-to-Source Voltage (V)
Figure 8. Unclamped Inductive Switching Capability
1000
If Rz 0: tAV= (L/R) ln[(IAS×R)/(1.3BVDSS-VDD)+1]
If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD)
R equals total Series resistance of Drain circuit
100
10
STARTING TJ = 150 oC
STARTING TJ = 25 oC
1
1E-6
10E-6 100E-6 1E-3 10E-3
tAV, Time in Avalanche (s)
100E-3
Figure 9. Typical Drain-to-Source ON Resistance
vs Drain Current
50
PULSE DURATION = 10 µs
DUTY CYCLE = 0.5% MAX
TC=25°C
40
30
20
10
0
VGS=10V
50
100
150
200
250
ID, Drain Current (A)
Figure 10. Typical Drain-to-Source ON Resistance
vs Junction Temperature
2.5
2.0
1.5
1.0.
PULSE DURATION = 250 µs
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 15A
0.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ, Junction Temperature (oC)
Page 4
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