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MBR1535CT

Schottky Barrier Rectifier

Inchange Semiconductor 

Schottky Barrier Rectifier

INCHANGE Semiconductor

MBR1535CT

FEATURES

·Center-Tap Configuation

·Guardring for Stress protection

·Low Forward Voltage

·High Operating Junction Temperature

·Guaranteed Reverse Avalanche

·100% avalanche tested

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

MECHANICAL CHARACTERISTICS

·Case: Epoxy, Molded

·Finish: All External Surfaces Corrosion Resistant and

Terminal Leads are Readily Solderable

·Lead Temperature for Soldering Purposes: 260℃ Max.

for 10 Seconds

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE UNIT

VRRM

VRWM

VR

IF(AV)

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

Average Rectified Forward Current

(Rated VR)

35

V

7.5

A

Peak Repetitive Forward Current

IFRM

(Rated VR,Square Wave,20kHz) TC= 105℃

15

A

Nonrepetitive Peak Surge Current

IFSM

(Surge applied at rated load conditions half-

150

A

wave, single phase, 60Hz)

IRRM

Peak Repetitive Reverse Surge Current

(20μs, 1.0kHz)

1.0

A

TJ

Junction Temperature

-65~150 ℃

Tstg

Storage Temperature Range

-65~175 ℃

dv/dt Voltage Rate of Change (Rated VR)

1000 V/μs

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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