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PHD96NQ03LT Ver la hoja de datos (PDF) - Philips Electronics

Número de pieza
componentes Descripción
Lista de partido
PHD96NQ03LT Datasheet PDF : 14 Pages
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Philips Semiconductors
PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
VDS
ID
Ptot
Tj
RDSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
6. Limiting values
Conditions
Tj = 25 to 175 °C
Tmb = 25 °C; VGS = 5 V
Tmb = 25 °C
Tj = 25° C; VGS = 10 V; ID = 25 A
Tj = 25° C; VGS = 5 V; ID = 25 A
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
VGSM
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
gate-source voltage
ID
drain current (DC)
IDM
peak drain current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
Source-drain diode
Tj = 25 to 175 °C
Tj = 25 to 175 °C; RGS = 20 k
tp 50 µs; pulsed;
duty cycle 25%; Tj 150 °C
Tmb = 25 °C; VGS = 5 V; Figure 2 and 3
Tmb = 100 °C; VGS = 5 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs; Figure 3
Tmb = 25 °C; Figure 1
IS
source (diode forward) current (DC) Tmb = 25 °C
ISM
peak source (diode forward) current Tmb = 25 °C; pulsed; tp 10 µs
Typ
Max Unit
-
25
V
-
75
A
-
115
W
-
175
°C
4.2
4.95 m
5.6
7.5
m
Min
Max Unit
-
25
V
-
25
V
-
±15
V
-
±20
V
-
75
A
-
65
A
-
240
A
-
115
W
55
+175 °C
55
+175 °C
-
75
A
-
240
A
9397 750 08963
Product data
Rev. 03 — 23 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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