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PHD96NQ03LT Ver la hoja de datos (PDF) - Philips Electronics

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PHD96NQ03LT Datasheet PDF : 14 Pages
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Philips Semiconductors
PHP/PHB/PHD96NQ03LT
N-channel enhancement mode field-effect transistor
80
ID
Tj = 25 ºC
(A)
60
10 V 5 V 4.5 V 4 V
03af12
3.5 V
80
ID VDS > ID x RDSon
(A)
60
03af14
40
40
3V
20
0
0
VGS = 2.5 V
0.2
0.4
0.6
0.8
1
VDS (V)
20
0
0
175 ºC
Tj = 25 ºC
1
2
3
4
VGS (V)
Tj = 25 °C
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Tj = 25 °C and 175 °C; VDS > ID x RDSon
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
0.016
03af13
2
RDSon Tj = 25 ºC
VGS = 3.5 V
a
()
1.6
0.012
0.008
4V
1.2
4.5 V
5V
0.8
0.004
10 V
0.4
03af18
0
0
20
40
60
80
ID (A)
Tj = 25 °C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
0
-60
0
60
120
180
Tj (ºC)
a = -------R----D----S--o---n-------
R D S o n ( 25 °C )
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 08963
Product data
Rev. 03 — 23 October 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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