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K6R1016C1D-J
(Rev.:2001)

64K x 16 Bit High-Speed CMOS Static RAM

Samsung 

K6R1016C1D

PREPLrIeMliImNiAnaRryY

CMOS SRAM

DC AND OPERATING CHARACTERISTICS*(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified)

Parameter

Input Leakage Current

Output Leakage Current

Operating Current

Symbol

ILI

ILO

ICC

Test Conditions

VIN=VSS to VCC

CS=VIH or OE=VIH or WE=VIL

VOUT=VSS to VCC

Min. Cycle, 100% Duty

CS=VIL, VIN=VIH or VIL, IOUT=0mA

Com.

Ind.

Standby Current

ISB

Min. Cycle, CS=VIH

ISB1

f=0MHz, CS≥VCC-0.2V,

VIN≥VCC-0.2V or VIN≤0.2V

Output Low Voltage Level

VOL

IOL=8mA

Output High Voltage Level

VOH

IOH=-4mA

10ns

12ns

10ns

12ns

Min Max Unit

-2

2

µA

-2

2

µA

-

65

mA

-

55

-

75

-

65

-

20

mA

-

5

-

0.4

V

2.4

-

V

* The above parameters are also guaranteed at industrial temperature range.

CAPACITANCE*(TA=25°C, f=1.0MHz)

Item

Input/Output Capacitance

Input Capacitance

Symbol

CI/O

CIN

Test Conditions

MIN

VI/O=0V

-

VIN=0V

-

Max

8

6

Unit

pF

pF

* Capacitance is sampled and not 100% tested.

AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.)

TEST CONDITIONS*

Parameter

Value

Input Pulse Levels

Input Rise and Fall Times

Input and Output timing Reference Levels

0V to 3V

3ns

1.5V

Output Loads

See below

* The above test conditions are also applied at industrial temperature range.

Output Loads(A)

DOUT

ZO = 50Ω

RL = 50Ω

VL = 1.5V

30pF*

Output Loads(B)

for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ

DOUT

255Ω

+5.0V

480Ω

5pF*

* Capacitive Load consists of all components of the

test environment.

* Including Scope and Jig Capacitance

-5-

Revision 0.3

December 2001

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