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K6R1016C1

64K x 16 Bit High-Speed CMOS Static RAM

Samsung 

K6R1016C1D

Document Title

64Kx16 Bit High-Speed CMOS Static RAM(5.0V Operating).

Operated at Commercial and Industrial Temperature Ranges.

Revision History

PRELIMINARY

CMOS SRAM

Rev. No.

Rev. 0.0

Rev. 0.1

Rev. 0.2

Rev. 0.3

Rev. 1.0

Rev. 2.0

Rev. 3.0

History

Initial release with Preliminary.

Page 4, DC operation condition modify

Current modify

1. Delete 15ns speed bin.

2. Change Icc for Industrial mode.

Item

Previous

ICC(Industrial)

10ns

12ns

85mA

75mA

1. Final datasheet release.

2. Correct read cycle timing diagram(2).

1. Delete 12ns speed bin.

1. Add the Lead Free Package type.

Current

75mA

65mA

Draft Data

June. 8. 2001

June. 16. 2001

September. 9. 2001

December. 18.2001

Remark

Preliminary

Preliminary

Preliminary

Preliminary

June. 19. 2002

July. 8. 2002

July. 26, 2004

Final

Final

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,

please contact the SAMSUNG branch office near your office, call or contact Headquarters.

-1-

Rev. 3.0

July 2004

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