S1A Ver la hoja de datos (PDF) - Taiwan Memory Technology
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S1A Datasheet PDF : 4 Pages
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CREAT BY ART
1A, 50V - 1000V Surface Mount Rectifiers
S1A - S1M
Taiwan Semiconductor
FEATURES
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Indicated by cathode band
Weight: 0.06 g (approximately)
DO-214AC (SMA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL S1A S1B S1D S1G S1J S1K S1M UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRMS
VDC
IF(AV)
IFSM
Maximum instantaneous forward voltage (Note 1)
@1A
VF
Maximum reverse current @ rated VR
Typical reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Non-repetitive peak reverse avalanche
energy at 25°C, IAS=1A, L=10mH
TJ=25°C
TJ=125°C
IR
trr
CJ
ERSM
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
RθJL
RθJA
TJ
TSTG
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700
V
50 100 200 400 600 800 1000 V
1
A
40
30
A
1.1
1
50
1.5
12
5
27
75
- 55 to +175
- 55 to +175
V
μA
μs
pF
mJ
30
85
°C/W
°C
°C
Document Number: DS_D1411068
Version: R15
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