BZX55A12_99 Ver la hoja de datos (PDF) - Vishay Semiconductors

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Lista de partido

BZX55A12_99

Silicon Epitaxial Planar Z–Diodes

Vishay Semiconductors 

Silicon Epitaxial Planar Z–Diodes

Features

D Very sharp reverse characteristic

D Low reverse current level

D Very high stability

D Low noise

D Available with tighter tolerances

BZX55C...

Vishay Telefunken

Applications

94 9367

Voltage stabilization

Absolute Maximum Ratings

Tj = 25_C

Parameter

Test Conditions

Power dissipation

Z–current

l=4mm, TL=25°C

Junction temperature

Storage temperature range

Type

Symbol Value Unit

PV

500

mW

IZ

PV/VZ

mA

Tj

175

°C

Tstg –65...+175 °C

Maximum Thermal Resistance

Tj = 25_C

Parameter

Test Conditions

Junction ambient

l=4mm, TL=constant

Symbol

Value

Unit

RthJA

300

K/W

Electrical Characteristics

Tj = 25_C

Parameter

Test Conditions

Forward voltage

IF=200mA

Type

Symbol Min Typ Max Unit

VF

1.5 V

Document Number 85605

Rev. 4, 01-Apr-99

www.vishay.de • FaxBack +1-408-970-5600

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