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111RKI40S90

PHASE CONTROL THYRISTORS Stud Version

International Rectifier 

111PRreKvIiSoeursieDsatasheet

Index

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Voltage

Type number Code

40

VDRM/VRRM, max. repetitive

peak and off-state voltage

V

400

111RKI

80

800

120

1200

Next Data Sheet

VRSM , maximum non-

repetitive peak voltage

V

500

900

1300

IDRM/IRRM max.

@ TJ = TJ max.

mA

20

On-state Conduction

Parameter

IT(AV) Max. average on-state current

@ Case temperature

IT(RMS) Max. RMS on-state current

ITSM Max. peak, one-cycle

non-repetitive surge current

I2t

Maximum I2t for fusing

I2√ t Maximum I2√t for fusing

VT(TO)1 Low level value of threshold

voltage

VT(TO)2 High level value of threshold

voltage

rt1

Low level value of on-state

slope resistance

rt2

High level value of on-state

slope resistance

VTM Max. on-state voltage

IH

Maximum holding current

IL

Typical latching current

111RKI

110

90

172

2080

2180

1750

1830

21.7

19.8

15.3

14.0

217

0.82

1.02

2.16

1.70

1.57

150

400

Units Conditions

A 180° conduction, half sine wave

°C

DC @ 83°C case temperature

t = 10ms No voltage

12

A t = 8.3ms reapplied

t = 10ms 100% VRRM

t = 8.3ms reapplied

Sinusoidal half wave,

KA2s

KA2√s

t = 10ms No voltage

t = 8.3ms reapplied

Initial TJ = TJ max.

t = 10ms 100% VRRM

t = 8.3ms reapplied

t = 0.1 to 10ms, no voltage reapplied

(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.

V

(I > π x IT(AV)),TJ = TJ max.

(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.

mΩ

(I > π x IT(AV)),TJ = TJ max.

V

Ipk=

350A,

TJ

=

TJ

max.,

tp

=

10ms

sine pulse

2222222222222

mA TJ = 25°C, anode supply 6V resistive load

Switching

Parameter

di/dt Max. non-repetitive rate of rise

of turned-on current

td

Typical delay time

tq

Typical turn-off time

111RKI

Units Conditions

300

A/µs Gate drive 20V, 20Ω, tr ≤ 1µs

TJ = TJ max, anode voltage ≤ 80% VDRM

1

Gate current 1A, dig/dt = 1A/µs

µs

Vd = 0.67% VDRM, TJ = 25°C

110

ITM = 50A, TJ = TJ max., di/dt = -5A/µs, VR = 50V

dv/dt = 20V/µs, Gate 0V 25Ω

To Order

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