W26NM60_05 Ver la hoja de datos (PDF) - STMicroelectronics
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W26NM60_05 Datasheet PDF : 9 Pages
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STW26NM60
Table 7: On /Off
Symbol
Parameter
V(BR)DSS Drain-source Breakdown
Voltage
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS(th) Gate Threshold Voltage
RDS(on
Static Drain-source On
Resistance
Test Conditions
ID = 250 µA, VGS = 0
VDS = Max Rating
VDS = Max Rating, TC = 125°C
VGS = ± 20 V
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 13 A
Min.
600
3
Typ.
4
0.125
Max. Unit
V
10
µA
100
µA
± 10
µA
5
V
0.135
Ω
Table 8: Dynamic
Symbol
Parameter
gfs (1) Forward Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
COSS eq (3). Equivalent Output
Capacitance
td(on)
tr
td(off)
tf
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Test Conditions
VDS = 15 V , ID = 13 A
VDS = 25 V, f = 1 MHz,
VGS = 0
VGS = 0 V, VDS = 0 to 400 V
VDD = 300 V, ID = 13 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 15)
VDD = 480 V, ID = 26 A,
VGS = 10 V
(see Figure 18)
Min.
Typ.
20
2900
900
40
300
35
22
14
20
73
20
37
Max. Unit
S
pF
pF
pF
pF
ns
ns
ns
ns
102
nC
nC
nC
Table 9: Source Drain Diode
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
26
A
104
A
VSD (1) Forward On Voltage
ISD = 26 A, VGS = 0
1.5
V
trr
Reverse Recovery Time
ISD = 26 A, di/dt = 100 A/µs
450
ns
Qrr
Reverse Recovery Charge VDD = 100V
7
µC
IRRM
Reverse Recovery Current (see Figure 16)
30.5
A
trr
Reverse Recovery Time
ISD = 26 A, di/dt = 100 A/µs
560
ns
Qrr
Reverse Recovery Charge VDD = 100V, Tj = 150°C
9
µC
IRRM
Reverse Recovery Current (see Figure 16)
32.5
A
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
(3) Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS.
3/9
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