SPB20N60S5 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Lista de partido
| SPB20N60S5 Datasheet PDF : 0 Pages | |||
9 Typ. gate charge
VGS = f (QGate)
parameter: ID = 20 A pulsed
SPP20N60S5
16
V
0.2 VDS max
12 0.8 VDS max
10
8
6
4
2
0
0
20
40
60
80 nC
120
QGate
11 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
20
SPB20N60S5
10 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 2 SPP20N60S5
A
10 1
10 0
10 -1
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
12 Avalanche energy
EAS = f (Tj)
par.: ID = 10 A, VDD = 50 V
750
mJ
A
10
Tj(START)=25°C
5
Tj(START)=125°C
0
10
-3
10 -2
10 -1
10 0
10 1
10 2
Rev. 2.3
µs 10 4
tAR
Page 7
600
550
500
450
400
350
300
250
200
150
100
50
0
20 40 60 80 100 120 °C 160
Tj
2005-07-22
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