BAT54WS Ver la hoja de datos (PDF) - Diode Semiconductor Korea

Número de pieza

componentes Descripción

Lista de partido

BAT54WS

Schottky Barrier Diode

Diode Semiconductor Korea 

Diode Semiconductor Korea

Schottky Barrier Diode

BAT54WS

Parameter

Reverse Breakdown Voltage

Forward voltage

Reverse leakage current

Reverse recovery time

Junction capacitance

Symbol

V(BR)R

VF1

VF2

VF3

VF4

VF5

IR

trr

CJ

Conditions

IR=100μA

IF=0.1mA

IF=1.0mA

IF=10mA

IF=30mA

IF=100mA

VR=25V

IF=10mA,IR=10mA

to 1mA RL=100Ω

VR=1.0V,f=1.0MHz

Min.

30

Typ.

Max. Unit

V

240

mV

320

mV

400

mV

500

mV

1000 mV

2.0

μA

5.0

ns

10

pF

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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