IRFU224 Ver la hoja de datos (PDF) - Kersemi Electronic Co., Ltd.
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IRFU224 Datasheet PDF : 7 Pages
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IRFR224, IRFU224, SiHFR224, SiHFU224
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
-
-
3.8
A
-
-
15
Body Diode Voltage
VSD
TJ = 25 °C, IS = 3.8 A, VGS = 0 Vb
-
-
1.8
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
-
200
400
ns
TJ = 25 °C, IF = 4.4 A, dI/dt = 100 A/µsb
Qrr
-
0.93 1.9
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
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