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ZSR1200GTA Ver la hoja de datos (PDF) - Zetex => Diodes

Número de pieza
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Lista de partido
ZSR1200GTA Datasheet PDF : 18 Pages
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ZSR SERIES
ZSR1000 test conditions (Unless otherwise stated):Tj=25°C, IO=100mA, Vin=14V
Symbol
VO
VO
VO
Ig
Ig
Vn
Vin/VO
Vin
VO/T
Parameter
Conditions
Output Voltage
Line regulation
Load regulation
Quiescent current
IO=1 to 200mA()
Vin=12 to 20V
IO =1 to 100mA()
Vin=12 to 20V
IO=1 to 200mA
IO=1 to 100mA
()
Quiescent current change IO=1 to 200mA
Vin=12 to 20V
Output noise voltage
f=10Hz to 10Hz
Ripple rejection
Input voltage required to
maintain regulation
Average temperature
coefficient of VO
Vin=13 to 18V
f=120Hz
IO=5.0mA()
Min.
9.75
9.6
9.6
Typ.
10
Max. Units
10.25 V
10.4 V
10.4 V
12
40 mV
9
30 mV
3
mV
350 600 A
100 A
100 A
150
V rms
43
57
dB
11.7
V
0.25
mV/°C
ZSR1200 test conditions (Unless otherwise stated):Tj=25°C, IO=100mA, Vin=16V
Symbol
VO
VO
VO
Ig
Ig
Vn
Vin/VO
Vin
VO/T
Parameter
Output Voltage
Line regulation
Load regulation
Quiescent current
Conditions
IO=1 to 200mA()
Vin=14 to 20V
IO =1 to 100mA()
Vin=14 to 20V
IO=1 to 200mA
IO=1 to 100mA
()
Quiescent current change IO=1 to 200mA
Vin=14 to 20V
Output noise voltage
f=10Hz to 10Hz
Ripple rejection
Input voltage required to
maintain regulation
Average temperature
coefficient of VO
Vin=15 to 18V
f=120Hz
IO=5.0mA()
Min.
11.7
11.52
11.52
Typ.
12
Max. Units
12.3 V
12.48 V
12.48 V
12
40 mV
9
30 mV
3
mV
350 600 A
100 A
100 A
150
V rms
43
57
dB
13.7
V
0.25
mV/°C
NOTES:
()Tj=-55 to 125°C
Issue 9 - October 2007
5
© Zetex Semiconductors plc 2007
www.zetex.com

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