IRG4PC50S Ver la hoja de datos (PDF) - International Rectifier

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IRG4PC50S

INSULATED GATE BIPOLAR TRANSISTOR,Standard Speed IGBT

International Rectifier 

8000

6000

4000

 VGE = 0V, f = 1MHz

Cies = Cge + Cgc , Cce SHORTED

Cres = Cgc

Coes = Cce + Cgc

 Cies

2000

0

1

C oes

C res

10

100

VCE , Collector-to-Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

IRG4PC50S

 20

VCC = 400V

I C = 41A

16

12

8

4

0

0

40

80

120

160

200

QG , Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

10.0

 VCC = 480V

VGE = 15V

TJ = 25 ° C

IC = 41A

9.5

9.0

 100 RG = O5.h0mΩ

VGE = 15V

VCC = 480V

10

 IC = 82 A

 IC = 41 A

 IC =20.5 A

8.5

0

10

20

30

40

50

RRGG , Gaattee RReessisistatanncece( (ΩO)hm)

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

www.irf.com

1

-60 -40 -20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature ( °C )

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

5

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