2N7002K(2009) Ver la hoja de datos (PDF) - PANJIT INTERNATIONAL

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componentes Descripción

fabricante

2N7002K
(Rev.:2009)

60V N-Channel Enhancement Mode MOSFET - ESD Protected

PANJIT INTERNATIONAL 

2N7002K

Typical Characteristics Curves (TA=25OC,unless otherwise noted)

1.2

VGS= 10V ~ 6.0V

1

0.8

5.0V

4.0V

0.6

0.4

3.0V

0.2

0

0

1

2

3

4

5

VDS - Drain-to-Source Voltage (V)

Fig. 1F-TIYGP.1IC-ALOFuOtpRuWtARCDhCaHraAcRteArCisTtEicRISTIC

5

4

3

2

VGS=4.5V

1

VGS=10V

0

0

0.2

0.4

0.6

0.8

1

ID - Drain Current (A)

FIG.3- On Resistance vs Drain Current

1.8

VGS=10V

1.6 ID=500mA

1.4

1.2

1

0.8

0.6

-50 -25 0 25 50 75 100 125 150

TJ - Junction Temperature (oC)

FIG.5- On Resistance vs Junction Temperature

1.2

VDS=10V

1

0.8

0.6

0.4

TJ=25

0.2

0

0

1

2

3

4

5

6

VGS - Gate-to-Source Voltage (V)

FIG.2- Transfer Characteristic

5

4

3

ID=500mA

2

ID=200mA

1

0

2 3 4 5 6 7 8 9 10

VGS - Gate-to-Source Voltage (V)

FIG.4- On Resistance vs Gate to Source Voltage

REV.0.1-FEB.3.2009

PAGE . 3

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