2SA1962 Ver la hoja de datos (PDF) - Quanzhou Jinmei Electronic

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2SA1962

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; IB=0

VCEsat Collector-emitter saturation voltage IC=-8 A;IB=-0.8A

VBE

Base-emitter voltage

IC=-7A ; VCE=-5V

ICBO

Collector cut-off current

VCB=-230V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-7A ; VCE=-5V

fT

Transition frequency

IC=-1A ; VCE=-5V

COB

Output capacitance

IE=0; VCB=-10V;f=1MHz

‹ hFE-1 classifications

R

O

55-110

80-160

Product Specification

2SA1962

MIN TYP. MAX UNIT

-230

V

-3.0

V

-1.5

V

-5

μA

-5

μA

55

160

35

30

MHz

360

pF

2

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