SGW20N60HS(2009) Ver la hoja de datos (PDF) - Infineon Technologies

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SGW20N60HS
(Rev.:2009)

High Speed IGBT in NPT-technology

Infineon Technologies 

Thermal Resistance

Parameter

Characteristic

IGBT thermal resistance,

junction – case

Thermal resistance,

junction – ambient

SGP20N60HS

SGW20N60HS

Symbol

Conditions

RthJC

RthJA

PG-TO-220-3-1

PG-TO-247-3-21

Max. Value

Unit

0.7

K/W

62

40

Electrical Characteristic, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current

Transconductance

V(BR)CES

VCE(sat)

VGE(th)

ICES

IGES

gfs

VGE=0V, IC=500µA

VGE = 15V, IC=20A

Tj=25°C

Tj=150°C

IC=500µA,VCE=VGE

VCE=600V,VGE=0V

Tj=25°C

Tj=150°C

VCE=0V,VGE=20V

VCE=20V, IC=20A

min.

600

3

-

-

-

-

Value

Typ.

-

2.8

3.5

4

-

-

-

14

Unit

max.

-V

3.15

4.00

5

µA

40

2500

100 nA

S

Dynamic Characteristic

Input capacitance

Output capacitance

Reverse transfer capacitance

Ciss

Coss

Crss

VCE=25V,

VGE=0V,

f=1MHz

-

1100

pF

-

105

-

64

Gate charge

QGate

VCC=480V, IC=20A

-

100

nC

VGE=15V

Internal emitter inductance

LE

PG-TO-220-3-1

-

7

nH

measured 5mm (0.197 in.) from case

PG-TO-247-3-21

13

Short circuit collector current1)

IC(SC)

VGE=15V,tSC≤10µs

-

170

A

VCC ≤ 600V,

Tj ≤ 150°C

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

2

Rev 2.5 Nov 09

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