IRFP4710PBF Ver la hoja de datos (PDF) - International Rectifier
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IRFP4710PBF Datasheet PDF : 9 Pages
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IRFP4710PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS
Gate-to-Source Reverse Leakage
100 ––– ––– V VGS = 0V, ID = 250µA
––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
––– 0.011 0.014 Ω VGS = 10V, ID = 45A
3.5 ––– 5.5 V VDS = VGS, ID = 250µA
––– ––– 1.0 µA VDS = 95V, VGS = 0V
––– ––– 250
VDS = 80V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
gfs
Forward Transconductance
35 ––– –––
Qg
Total Gate Charge
––– 110 170
Qgs
Gate-to-Source Charge
––– 43 –––
Qgd
Gate-to-Drain ("Miller") Charge
––– 40 –––
td(on)
Turn-On Delay Time
––– 35 –––
tr
Rise Time
––– 130 –––
td(off)
Turn-Off Delay Time
––– 41 –––
tf
Fall Time
––– 38 –––
Ciss
Input Capacitance
––– 6160 –––
Coss
Output Capacitance
––– 440 –––
Crss
Reverse Transfer Capacitance
––– 250 –––
Coss
Output Capacitance
––– 1580 –––
Coss
Output Capacitance
––– 280 –––
Coss eff. Effective Output Capacitance
––– 430 –––
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 45A
ID = 45A
VDS = 50V
VGS = 10V,
VDD = 50V
ID = 45A
RG = 4.5Ω
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
190
45
20
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse RecoveryCharge
ton
Forward Turn-On Time
2
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 72
A showing the
––– ––– 300
integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 45A, VGS = 0V
––– 74 110 ns TJ = 25°C, IF = 45A
––– 180 260 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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