IRF3708/3708S/3708L
3500
2800
2100
VGS = 0V, f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
1400
700
0
1
C oss
C rss
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10 ID = 24.8A
8
VDS = 15V
6
4
2
0
0
10
20
30
40
50
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
100 TJ = 175° C
TJ = 25°C
10
1
0.1
0.2
VGS = 0 V
0.8
1.4
2.0
2.6
VSD,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
1 0us
1 00us
10
1 ms
1 0ms
TC = 25°C
TJ = 175 ° C
Single Pulse
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
2014-8-13
4
www.kersemi.com