IRF3708 Ver la hoja de datos (PDF) - Inchange Semiconductor

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IRF3708

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

IRF3708， IIRF3708

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID = 250µA

VGS(th)

Gate Threshold Voltage

VDS=VGS; ID=250μA

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=15A

IGSS

Gate-Source Leakage Current

VGS=± 12V

IDSS

Drain-Source Leakage Current VDS=24V; VGS= 0V

VSD

Diode forward voltage

IS =31A, VGS = 0 V

MIN TYP MAX UNIT

30

V

0.6

2.0

V

12.0 mΩ

±0.2 μA

20

μA

1.3

V

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