FCPF190N60E Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FCPF190N60E Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
50
VGS = 15.0V
10.0V
8.0V
7.0V
10
6.0V
5.5V
5.0V
4.5V
1
0.3
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
10
VDS, Drain to Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.4
Figure 2. Transfer Characteristics
100
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
150oC
10
25oC
-55oC
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
0.3
VGS = 10V
0.2
VGS = 20V
0.1
0
*Note: TC = 25oC
10
20
30
40
50
60
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
10000
Ciss
1000
100
Coss
*Note:
10
1. VGS = 0V
2. f = 1MHz
Crss
Ciss = Cgs + Cgd (Cds = shorted)
1
Coss = Cds + Cgd
Crss = Cgd
0.5
0.1
1
10
100
600
VDS, Drain to Source Voltage [V]
©2011 Fairchild Semiconductor Corporation
FCP190N60E / FCPF190N60E Rev. C10
150oC
25oC
10
*Notes:
1. VGS = 0V
1
2. 250μs Pulse Test
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 120V
8
VDS = 300V
VDS = 480V
6
4
2
0
*Note: ID = 10A
0
15
30
45
60
75
Qg, Total Gate Charge [nC]
3
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