FDP15N40 Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FDP15N40 Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
40 VGS = 15.0V
10.0V
8.0 V
7.0 V
10
6.5 V
6.0 V
5.5 V
1
0.2
0.1
*Notes:
1. 250μs Pulse Test
2. TC = 25oC
1
10
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.50
0.45
0.40
0.35
0.30
0.25
0.20
0
VGS = 10V
VGS = 20V
*Note: TJ = 25oC
10
20
30
40
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
3000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2000
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
1000
Coss
Crss
0
0.1
1
10
30
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
60
150oC
10
-55oC
25oC
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
1
4
5
6
7
8
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
80
10
150oC
25oC
1
0.1
0.2
*Notes:
1. VGS = 0V
2. 250μs Pulse Test
0.4 0.6 0.8 1.0 1.2 1.3
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 200V
8
VDS = 320V
6
4
2
*Note: ID = 15A
0
0
5
10 15 20 25 30
Qg, Total Gate Charge [nC]
FDP15N40 / FDPF15N40 Rev. A
3
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