FDP18N20F Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FDP18N20F Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
50
VGS = 10.0V
8.0 V
7.0 V
6.5 V
6.0 V
10
5.5 V
Figure 2. Transfer Characteristics
30
10
150oC
25oC
*Notes:
1
1. 250µs Pulse Test
2. TC = 25oC
0.1
1
10
VDS,Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
0.25
0.20
0.15
VGS = 10V
VGS = 20V
0.10
0
*Note: TJ = 25oC
10
20
30
40
50
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
2000
1500
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
*Note:
1. VGS = 0V
2. f = 1MHz
Ciss
Coss
500
Crss
0
0.1
1
10
30
VDS, Drain-Source Voltage [V]
*Notes:
1. VDS = 20V
2. 250µs Pulse Test
1
4
5
6
7
VGS,Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
100
150oC
25oC
10
*Notes:
1. VGS = 0V
2. 250µs Pulse Test
1
0.0
0.4
0.8
1.2
1.6
2.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 40V
VDS = 100V
8
VDS = 160V
6
4
2
*Note: ID = 18A
0
0
6
12
18
24
Qg, Total Gate Charge [nC]
FDP18N20F / FDPF18N20FT Rev. A
3
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