12N50 Ver la hoja de datos (PDF) - Inchange Semiconductor
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12N50 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
12N50
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
V(BR)DSS Drain-Source Breakdown Voltage
VGS(th) Gate Threshold Voltage
VSD
Diode Forward On-voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
Ciss
Input Capacitance
Crss
Reverse Transfer capacitance
Coss
Output Capacitance
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
CONDITIONS
VGS= 0; ID=250µA
VDS= VGS; ID=250µA
IS= 12A ;VGS= 0
VGS= 10V; ID= 6A
VGS= ±30V;VDS= 0
VDS=500V; VGS= 0
VDS=25V;
VGS=0V;
fT=1MHz
VGS=10V;
ID=12A;
VDD=250V;
RL=25Ω
MIN TYPE MAX UNIT
500
V
2.0
4.0
V
1.5
V
0.5
Ω
±100 nA
10
µA
1450 1930
14.5
22
pF
198 265
54
120
28
65
ns
47
105
75
160
·
isc website：www.iscsemi.cn
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