A1700 Ver la hoja de datos (PDF) - Unisonic Technologies
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A1700 Datasheet PDF : 3 Pages
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2SA1700
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
-400
V
VCEO
-400
V
Emitter-Base Voltage
Collector Current
VEBO
-5
V
IC
-200
mA
Collector Current (PULSE)
Power Dissipation
Junction Temperature
ICP
-400
mA
PD
1
W
10 (TC=25°C)
W
TJ
150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Transfer Ratio
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Reverse Transfer Capacitance
Gain-Bandwidth Product
Turn-on Time
Turn-off Time
SYMBOL
TEST CONDITIONS
BVCBO IC= -10A, IE=0
BVCEO IC= -1mA, IB=0, RBE=
BVEBO IE= -10A, IC=0
ICBO VCB= -300V, IE=0
IEBO VEB= -4V, IC=0
hFE VCE= -10V, IC= -50mA
VCE(SAT) IC= -50mA, IB= -5mA
VBE(SAT) IC= -50mA, IB= -5mA
COB VCB= -30V, f=1MHz
CRE VCB= -30V, f=1MHz
fT
VCE= -30V, IC= -10mA
tON See test circuit
tOFF See test circuit
CLASSIFICATION OF hFE
MIN TYP MAX UNIT
-400
V
-400
V
-5
V
-0.1 A
-0.1 A
60
200
-0.8
V
-1.0
V
5
pF
4
pF
70
MHz
0.25
s
5
s
RANK
RANGE
D
60-120
E
100-200
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R213-011.C
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