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A1700

Silicon PNP Power Transistor

Inchange Semiconductor 

isc Silicon PNP Power Transistor

DESCRIPTION

·High breakdown voltage

·Low Collector-Emitter Saturation Voltage

·High Power Dissipation-

: PC= 10W@TC=25℃,PC= 10W@Ta=25℃

·Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·For high voltage driver applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-400

V

VCEO

Collector-Emitter Voltage

-400

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-0.2

A

ICM

Collector Current-Peak

Collector Power Dissipation

PC

@ TC=25℃

Collector Power Dissipation

@Ta=25℃

TJ

Junction Temperature

-0.4

A

10

W

1.0

150

℃

Tstg

Storage Temperature Range

-55~150

℃

INCHANGE Semiconductor

2SA1700

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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