A1700 Ver la hoja de datos (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

Número de pieza

componentes Descripción

Lista de partido

A1700

Silicon PNP transistor in a TO-252 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2SA1700

Rev.E May.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Current – Continuous(Pulse)

Collector Power Dissipation

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC

PC(Tc=25℃)

Tj

Tstg

DATA SHEET

数值

Rating

-400

-400

-5.0

-200

-400

1.0

10

150

-55～150

单位

Unit

V

V

V

mA

mA

W

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

符号

Symbol

测试条件

Test Conditions

VCBO IC=-10μA IE=0

VCEO IC=-1.0mA RBE=∞

Emitter to Base Breakdown Voltage VEBO IE=-10μA IC=0

Collector Cut-Off Current

ICBO VCB=-300V IE=0

Emitter Cut-Off Current

IEBO VEB=-4.0V IC=0

DC Current Gain

Collector to Emitter Saturation

Voltage

Base to Emitter Saturation Voltage

hFE VCE=-10V

VCE(sat) IC=-50mA

VBE(sat) IC=-50mA

IC=-50mA

IB=-5.0mA

IB=-5.0mA

Transition Frequency

fT VCE=-30V IC=-10mA

Collector output capacitance

Cob VCB=-30V f=1.0MHz

Reverse Transfer Capacitance

Cre VCB=-30V f=1.0MHz

Turn-On Time

Turn-Off Time

ton 10IB1=-10IB2=IC=50mA

RL=3KΩ

RB=200Ω

toff at IC=50mA

最小值 典型值 最大值 单位

Min Typ Max Unit

-400

V

-400

V

-5.0

V

-0.1 μA

-0.1 μA

60

200

-0.8 V

-1.0 V

70

MHz

5.0

pF

4.0

pF

0.25

μs

5.0

μs

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