A1700 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

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A1700

PNP Epitaxial Planar Silicon Transistor

Galaxy Semi-Conductor 

PNP Epitaxial Planar Silicon Transistor

FEATURES

 High breakdown voltage.

 Adoption of MBIT process.

 Excellent hFE linearity.

Pb

Lead-free

Production specification

2SA1700

TO-251

TO-252

MAXIMUM RATING operating temperature range applies unless otherwise specified

Symbol

Parameter

Value

Units

VCBO

Collector-Base Volage

-400

V

VCEO

Collector-Emitter Voltage

-400

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current

-200

mA

ICP

Collector Power Dissipation

-400

mA

PC

Collector Power Dissipation

1

W

Tj ,Tstg

Junction and Storage temperature range

-55 to +150

℃

V/(W)005

Rev.A

www.gmesemi.com

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