RF2480(Rev_A3) Ver la hoja de datos (PDF) - RF Micro Devices

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RF2480
(Rev.:Rev_A3)

DIRECT QUADRATURE MODULATOR

RF Micro Devices 

RF2480

Parameter

RF Output (~900MHz)

Maximum Output Power

High-Linearity Output Power

Carrier Suppression

Sideband Suppression

Output Impedance

Broadband Noise Floor

RF Output (~2000MHz)

Maximum Output Power

High-Linearity Output Power

Carrier Suppression

Sideband Suppression

Output Impedance

Broadband Noise Floor

Power Down

Turn On/Off Time

PD Input Resistance

Power Control “ON”

Power Control “OFF”

Power Supply

Voltage

Current

Specification

Unit

Min.

Typ.

Max.

Condition

LO=880MHz, -5dBm; SSB

0

+4

-11

50

35

50

35

13 - j : 25

-153.0

dBm

I&Q Amplitude=2VPP

dBm

I&Q Amplitude=0.325VPP

dB

T=25°C; POUT=-11dBm (meets CDMA base

station requirements); optimized I,Q DC off-

sets

dB

Over Temperature (Temperature cycled from

-40°C to +85°C after optimization at

T=25°C; POUT=-11dBm)

dB

T=25°C; POUT=-11dBm; optimized I,Q DC

offsets

dB

Over Temperature (Temperature cycled from

-40°C to +85°C after optimization at

T=25°C; POUT=-11dBm)

5

Ω

dBm/Hz

At 20MHz offset, VCC=5V; Tied to VREF:

ISIG, QSIG, IREF, and QREF.

LO=2000MHz, -5dBm; SSB

-7

-3

-17

50

35

50

40

58 - j11

-158.0

dBm

dBm

dB

dB

dB

dB

Ω

dBm/Hz

I&Q Amplitude=2VPP

I&Q Amplitude=0.325VPP

T=25°C; POUT=-17dBm; optimized I,Q DC

offsets

Temperature cycled from -40°C to +85°C

after optimization at T=25°C; POUT=-17dBm

T=25°C; POUT=-17dBm; optimized I,Q DC

offsets

Temperature cycled from -40°C to +85°C

after optimization at T=25°C; POUT=-17dBm

At 20MHz offset, VCC=5V; Tied to VREF:

ISIG, QSIG, IREF, and QREF.

100

ns

50

kΩ

2.8

V

Threshold voltage

1.0

1.2

V

Threshold voltage

5

V

Specifications

4.5

6.0

V

Operating Limits

50

mA

Operating

25

µA

Power Down

Rev A3 011019

5-31

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