MPSA27 Ver la hoja de datos (PDF) - Motorola => Freescale
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MPSA27 Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Darlington Transistor
NPN Silicon
Order this document
by MPSA27/D
MPSA27
COLLECTOR 3
BASE
2
EMITTER 1
MAXIMUM RATINGS
Rating
Symbol MPSA25 MPSA27 Unit
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
VCES
VEBO
IC
PD
40
60
10
500
625
5.0
Vdc
Vdc
mAdc
mW
mW/°C
Operating and Storage Junction
TJ, Tstg
– 55 to +150
°C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 100 µAdc, VBE = 0)
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Collector Cutoff Current
(VCB = 30 V, IE = 0)
(VCB = 40 V, IE = 0)
(VCB = 50 V, IE = 0)
Collector Cutoff Current
(VCE = 30 V, VBE = 0)
(VCE = 40 V, VBE = 0)
(VCE = 50 V, VBE = 0)
Emitter Cutoff Current
(VEB = 10 Vdc)
V(BR)CES
60
V(BR)CBO
60
ICBO
—
ICES
—
IEBO
—
1
2
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
Typ
Max
Unit
—
—
Vdc
—
—
Vdc
—
100
nAdc
—
500
nAdc
—
100
nAdc
©MMotootorroollaa,
Small–Signal
Inc. 1996
Transistors,
FETs
and
Diodes
Device
Data
1
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