2SJ574 Ver la hoja de datos (PDF) - Renesas Electronics

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2SJ574

Silicon P Channel MOS FET High Speed Switching

Renesas Electronics 

2SJ574

Silicon P Channel MOS FET

High Speed Switching

Features

 Low on-resistance

RDS = 1.1 Ω typ. (VGS = –10 V, ID = –150 mA)

RDS = 2.2 Ω typ. (VGS = –4 V, ID = –150 mA)

 4 V gate drive device.

 Small package (MPAK)

Outline

RENESAS Package code: PLSP0003ZB-A

(Package name: MPAK)

Note: Marking is BP

3

G

1

2

Preliminary Datasheet

R07DS0574EJ0400

(Previous: ADE-208-739B)

Rev.4.00

Nov 14, 2011

D

1. Source

2. Gate

3. Drain

S

Absolute Maximum Ratings

Item

Symbol

Drain to source voltage

VDSS

Gate to source voltage

VGSS

Drain current

Drain peak current

ID

ID(pulse)Note1

Body-drain diode reverse drain current

Channel dissipation

IDR

Pch Note 2

Channel temperature

Tch

Storage temperature

Tstg

Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value on the alumina ceramic board (12.5 x 20 x 0.7mm)

Ratings

–30

±20

–300

–1.2

–300

400

150

–55 to +150

(Ta = 25°C)

Unit

V

V

mA

A

mA

mW

°C

°C

R07DS0574EJ0400 Rev.4.00

Nov 14, 2011

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