IRFR9120 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Lista de partido

IRFR9120

Power MOSFET

Vishay Semiconductors 

IRFR9120, IRFU9120, SiHFR9120, SiHFU9120

www.vishay.com

Vishay Siliconix

VDS

Vary tp to obtain

required IAS

Rg

- 10 V

tp

L

D.U.T

IAS

0.01 Ω

-

+

V

DD

Fig. 12a - Unclamped Inductive Test Circuit

IAS

VDS

VDD

tp

VDS

Fig. 12b - Unclamped Inductive Waveforms

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

- 10 V

QGS

VG

QG

QGD

Charge

Fig. 13a - Basic Gate Charge Waveform

Current regulator

Same type as D.U.T.

12 V

50 kΩ

0.2 µF

0.3 µF

-

D.U.T. + VDS

VGS

- 3 mA

IG

ID

Current sampling resistors

Fig. 13b - Gate Charge Test Circuit

S13-0167-Rev. C, 04-Feb-13

6

Document Number: 91280

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: