IRF330 Ver la hoja de datos (PDF) - New Jersey Semiconductor
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IRF330 Datasheet PDF : 3 Pages
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IRF330-333/IRF730-733
Electrical Characteristics (Tc = 25°C unless otherwise noted)
Symbol
Characteristic
OH Characteristics
V(BR)DSS Drain Source Breakdown Voltage1
IRF330/332/730/732
IRF331/333/731/733
loss
Zero Gate Voltage Drain Current
Mln
400
350
Max
250
1000
IGSS
Gate-Body Leakage Current
IRF330-333
IRF730-733
On Characteristics
VQS(th) Gate Threshold Voltage
2.0
RDS(on) Static Drain-Source On-Resistance2
IRF330/331/730/731
IRF332/333/732/733
(to
Forward Transconductance
3.0
Dynamic Characteristics
Qss
Input Capacitance
coss
Output Capacitance
c,93
Reverse Transfer Capacitance
Switching Characteristics (Tc - 25'C, Figures 12, 13)
*d(on)
V
tdfoff)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
t[
Fall Time
Qg
Total Gate Charge
±100
±500
4.0
1.0
1.5
900
300
BO
30
35
55
35
30
Symbol
Characteristic
Source-Drain Diode Characteristics
VSD
Diode Forward Voltage
IRF330/331/730/731
IRF332/333/732/733
tn
Reverse Recovery Time
Typ
Max
1.6
1.5
400
Unit
V
MA
MA
nA
V
n
s as)
PF
PF
pF
ns
ns
ns
ns
nC
Unit
V
V
ns
Test Conditions
VGS - 0 V, ID - 250 MA
VDS - Rated VOSs, VGS - 0 V
VDS - 0-8 x Rated VDSS.
VGS = 0 V, TC=125°C
VQS = ±20 v, VDS = o v
ID = 250 MA, VDS - VGS
VGS = 10 V, ID = 3.0 A
VDS = 10 v, ID = 3.0 A
VDS - 25 V, VGS = 0 V
f - 1 . 0 MHz
VDD=175 V, ID "3.0 A
VGS = 10 V, RGEN = 15 fi
RGS-15 fl
VGS -10 v, ID = 7.0 A
VDD = 180 V
Test Conditions
ls = 5.5 A; VGS = 0 V
ls = 4.5 A; VQS - 0 V
Is = 5.5 A; dls/dt = 100 A/MS
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