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BU505

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

VCESM

VCEO

ICsat

IC

ICM

IB

IBM

Ptot

Tstg

Tj

collector-emitter peak voltage

collector-emitter voltage

collector saturation current

collector current (DC)

collector current (peak value)

base current (DC)

base current (peak value)

total power dissipation

storage temperature

junction temperature

VBE = 0

open base

see Fig.3

see Fig.3

Tmb ≤ 25 °C; see Fig.4

Product specification

BU505; BU505D

MIN.

−

−

−

−

−

−

−

−

−65

−

MAX.

1 500

700

2

2.5

4

2

4

75

+150

150

UNIT

V

V

A

A

A

A

A

W

°C

°C

10

handbook, full pagewidth

Zth j−mb

(K/W)

1

δ=1

0.75

0.50

0.33

0.20

0.10

0.05

10−1

0.02

0.01

0

MGB859

10−2

10−2

10−1

1

10

Fig.2 Transient thermal impedance.

tp (ms)

102

1997 Aug 13

3

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