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BU505DF

Silicon diffused power transistors

Philips Electronics 

Philips Semiconductors

Silicon diffused power transistors

Product specification

BU505F; BU505DF

handbook, full pagewidth

102

IC

(A)

10

ICM max

IC max

1

MGB931

II

10−1

I

10−2

10−3

10−4

1

10

102

103 VCE (V) 104

Mounted without heatsink compound and 30 ±5 N force on centre of package.

Th = 25 °C.

I - Region of permissible DC operation.

II - Permissible extension for repetitive pulse operation.

Fig.4 Forward bias SOAR.

1997 Aug 13

5

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