BUT12A Ver la hoja de datos (PDF) - Nell Semiconductor Co., Ltd
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BUT12A Datasheet PDF : 6 Pages
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SEMICONDUCTOR
Fig.1 Reverse bias SOA
10
VBE = -1 to -5V;TC = 100°C
5
BUT12A Series RRooHHSS
Nell High Power Products
Fig.2 Power derating curve
120
80
40
0
0
400
800
1200
Collector-emitter voltage , VCE (volts)
0
0
50
100
150
Ambient temperature, Ta (˚C)
2
10
ICM max
10 ICM max
(a)
1
-1
10
-2
10
-3
10
10
d =0.01
I
II 50µs
100µs
200µs
500µs
1ms
2ms
5ms
(b) 10ms
20ms
DC
tp=20µs
III
IV
2
10
Fig.3 Forward bias SOA
Ta ≤ 25˚C
I - Region permissible DC operation
II - Permissible extension for repetitive pulse
operation
III - Area of permissible operation during turn-on
in single transistor converters, provided
RBE ≤ 100Ω and tp ≤ 0.6μs
IV - Repetitive pulse operation in this region is
permissible provided VBE ≤ 0 and tp ≤ 5ms.
(a) PDmax and PD peak max lines.
(b) Second breakdown limits.
3
10
Collector emitter voltage , VCE(volts)
Fig.4 Test circuit for VCE (sus)
Fig.5 Oscilloscope display for VCE (sus)
+50V
100 to 200 Ω
L
horizontal
oscilloscope
vertical
6V
～
300 Ω
1Ω
30 to 60 Hz
IC
(mA)
250
200
100
0
min VCE(V)
VCEO (sus)
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