MMBD2004S Ver la hoja de datos (PDF) - Willas Electronic Corp.

Número de pieza

componentes Descripción

Lista de partido

MMBD2004S

SWITCHING DIODE

Willas Electronic Corp. 

WILLAS

MMBDF4M6T1H2R0U-M+

SOT-23 Plastic-Encapsulate Diodes

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

FM1200-M+

SOD-123+ PACKAGE

Pb Free Product

Features

Package outline

• Batch process design, excellent power dissipation offers

SWITCHbIeNttGer rDevIOerDseEleakage current and thermal resistance.

• Low profile surface mounted application in order to

FEATURopEtSimize board space.

SOD-123H

SOT-23

MMBD••2HL0oi0gw4hpScouwtryreeprneltocsisasp,aahibsgihliiltieyc,foflioncwiesfnwocryiwt.cahrdinvgoldtaugaeldirnops.eries diode

manufa• cHtiugrhesdurbgye cthapeaebipliittya. xial planar process, designed for

0.146(3.7)

0.130(3.3)

0.012(0.3) Typ.

applica•tiGounasrdrreinqgufiorirnogvehrvigohltavgoelptarogteecctiaopn.ability. Power dissipation

Pb-Fre••eSUpilltiracacohnkigaehpg-ietsapxiesiaeldapvslawaniitlacarhbcinhlegip. , metal silicon junction.

RoHS •pLroedadu-cfrtefeorpapratscmkienegt ecnovdireonsmueffnixta”lGst”andards of

0.071(1.8)

0.056(1.4)

Haloge•nRMfoIrHLe-SeSpTprDordo-1udc9ut5fc0ot0r fp/o2arc2k8pinagcckoindegscuoffidxe"Gs"uffix “H”

MoistureHaSloegnesniftrieveitpyroLdeucvtefol r1packing code suffix "H"

1

3

Mechanical data

2

• Epoxy : UL94-V0 rated flame retardant

MARKI•NCGas: eB:6MDolded plastic, SOD-123H

,

y Maxim•uTemrmRinaatlisn:MPglseatth@eoddTte2ar0m=22i6n5a℃ls, solderable per MIL-STD-750

0.031(0.8) Typ.

0.040(1.0)

0.024(0.6)

0.031(0.8) Typ.

r Param• Peotlearrity : Indicated by cathode band

• Mounting Position : Any

a Non-Repetitive Peak Reverse Voltage

• Weight : Approximated 0.011 gram

Symbol

VRM

LimDitimensions in inches and (millimeters)Unit

300

V

DC Blocking Voltage

VR

240

V

in MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

PReatainkgRs aetp2e5t℃itivaemCbuiernrtetnemt perature unless otherwiseIOspecified.

200

mA

CSiongnlteinpuhaosueshaFlfowrwavaer,d60CHuzr,rreensitstive of inductive loaIdF.

225

mA

For capacitive load, derate current by 20%

lim Peak Repetitive FoRrAwTaIrNdGCSurrent

SYIFMRBMOL

FM120-MH

FM130-MH FM140-MH

625

FM150-MH

FM160-MH

FM180-MH

mA

FM1100-MH FM1150-MH FM1200-MH

UN

MFaorrkwingarCdodSeurge Current t=1μs

Maximum Recurrent Peak Reverse Voltage

MFaoxrimwuamrdRMSuSrVgoeltaCgue rrent t=1s

IFSM

12

13

14

145.0 16

VRRM

20

30

40

50

60

VIFRSMMS

14

21

1.0

28

35

42

18

10 A 115 120

80

100

150

200 Vol

56

70 A 105

140 Vol

e MPaoxwimeurmDDiCssBilpoacktiinognVoltage

VPDdC

20

30

40

2550 0

60

80

100 mW150

200 Vol

r MJauxnimcutimonAvTereamgepFeorrawtaurrdeRectified Current

TIOJ

P PSetaokrFaogrwearTdeSmurpgeeCrautrruernet 8R.3amnsgseingle half sine-wave

superimposed on rated load (JEDEC method)

TSIFTSGM

150

1.0

-55~+150

30

Am

℃

℃

Am

Typical Thermal Resistance (Note 2)

RΘJA

40

℃/

Typical Junction Capacitance (Note 1)

CJ

120

PF

OEpLerEatCingTTReImCpeAraLtuCreHRaAnRgeACTERISTICS (Ta=T2J5℃ unless-5o5ttho e+1rw25ise specified)

-55 to +150

℃

Storage Temperature Range

TSTG

- 65 to +175

℃

Parameter

CHARACTERISTICS

MaRxiemvuemrsFeorbwraerdaVkodlotawgenavt 1o.l0tAagDeC

Maximum Average Reverse Current at @T A=25℃

RaRteedvDeCrsBelovckoinltgaVgoeltalegaekage curre@nTt A=125℃

Symbol

Test conditions

Min

Max

Unit

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH UN

VF V(BR)

IR

IR

IR= 1000.μ5A0

VR=240V

0.70 240

0.5

10

0.85

0.1

0V.9

0.92 Vol

mAm

μA

NOTES:

1- MFeoarswuraerddatv1oMltHaZgaend applied reverse voltage of 4.0 VDC. VF

IF=100mA

1

V

2- TDhieormdael RceaspisatacnicteanFrcoem Junction to Ambient

CD

VR=0V f=1MHz

5

pF

Reveres recovery time

trr

IF=IR=30mA,RL=100Ω

50

ns

2012-06

2012-1

WILLAS ELECTRONIC CORP.

WILLAS ELECTRONIC CORP.

Share Link: