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IDT7026L
(Rev.:1996)

HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM

Integrated Device Technology 

IDT7026S/L

HIGH-SPEED 16K x 16 DUAL-PORT STATIC RAM

MILITARY AND COMMERCIAL TEMPERATURE RANGES

AC ELECTRICAL CHARACTERISTICS OVER THE

OPERATING TEMPERATURE AND SUPPLY VOLTAGE (5)

Symbol

Parameter

WRITE CYCLE

tWC

Write Cycle Time

tEW

Chip Enable to End-of-Write(3)

tAW

Address Valid to End-of-Write

tAS

Address Set-up Time(3)

tWP

Write Pulse Width

tWR

Write Recovery Time

tDW

tHZ

tDH

tWZ

tOW

tSWRD

tSPS

Data Valid to End-of-Write

Output High-Z Time(1, 2)

Data Hold Time(4)

Write Enable to Output in High-Z(1, 2)

Output Active from End-of-Write(1, 2, 4)

SEM Flag Write to Read Time

SEM Flag Contention Window

IDT7026X20

Com'l. Only

Min. Max.

IDT7026X25

Min. Max. Unit

20

—

25

— ns

15

—

20

— ns

15

—

20

— ns

0

—

0

— ns

15

—

20

— ns

0

—

0

— ns

15

—

15

— ns

—

12

—

15 ns

0

—

0

— ns

—

12

—

15 ns

0

—

0

— ns

5

—

5

— ns

5

—

5

— ns

IDT7026X35 IDT7026X55

Symbol

Parameter

WRITE CYCLE

tWC

Write Cycle Time

tEW

Chip Enable to End-of-Write(3)

tAW

Address Valid to End-of-Write

tAS

Address Set-up Time(3)

tWP

Write Pulse Width

tWR

Write Recovery Time

tDW

tHZ

tDH

tWZ

tOW

tSWRD

tSPS

Data Valid to End-of-Write

Output High-Z Time(1, 2)

Data Hold Time(4)

Write Enable to Output in High-Z(1, 2)

Output Active from End-of-Write(1, 2, 4)

SEM Flag Write to Read Time

SEM Flag Contention Window

Min. Max. Min. Max. Unit

35

—

55

— ns

30

—

45

— ns

30

—

45

— ns

0

—

0

— ns

25

—

40

— ns

0

—

0

— ns

15

—

30

— ns

—

15

—

25 ns

0

—

0

— ns

—

15

—

25 ns

0

—

0

— ns

5

—

5

— ns

5

—

5

— ns

NOTES:

2939 tbl 13

1. Transition is measured ±200mV from Low or High-impedance voltage with Output Test Load (Figure 2).

2. This parameter is guaranteed by device characterization, but is not production tested.

3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.

4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary

over voltage and temperature, the actual tDH will always be smaller than the actual tOW.

5. "X" in part numbers indicates power rating (S or L).

6.17

9

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